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Plastic Infrared Emitting Diode
OP290 Series
Features:
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Choice of narrow or wide irradiance pattern
Choice of power ranges
Choice of T-1?, TO-18 or T-46 package
Higher power output than GaAs at equivalent LEDs
Description:
Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an
IR-transmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of
silicon phototransistors, except for OP298 (AA, AB, AC, AD), which has either an 850 nm or 875 nm center
wavelength. For identification purposes, each LED anode lead is longer than the cathode lead. Package T-1?
devices include: OP290 , OP291 , OP292 , OP294, OP295, OP296 , OP297 , OP299 (A, B, C) and OP297FAB,
Plastic Package TO-18 or TO-46 devices include: OP293 and OP298 (A, B, C, AA, AB, AC, AD) .
Each OP290, OP291 and OP292 series come in three electrical parameters options A, B and C. The OP290
series forward current is specified under pulse conditions up to 1.5 amps, the OP291 series forward current is
specified under pulse conditions up to 100 milliamps and the OP292 series forward current is specified under
pulse conditions up to 1 amp. The Cathode Lead length is 0.06” (1.52 mm) shorter than the Anode Lead. The
silver-copper lead frame offers excellent thermal characteristics.
Each OP293 and OP298 series come in three electrical parameter options A, B and C. The OP293 series has an
included emission angle of 60° while the OP298 series has an included emission angle of 25°. The Cathode Lead
length is 0.06” (1.52 mm) shorter than the Anode Lead. These devices, which come in a variety of power ranges
offering a low cost replacement for TO-18 or TO-46 hermetic packages.
Each OP298 series come with a high irradiance output versions with four electrical parameter options AA, AB, AC
and AD. These power options are in the range of 5X greater than the A, B or C options. The OP298 series has an
included emission angle of 25°. The Cathode Lead length is 0.06” (1.52 mm) shorter than the Anode Lead. These
devices, which come in a variety of power ranges offering a low cost replacement for TO-18 or TO-46 hermetic
packages.
OP294 and OP299 are designed for low-current or power-limited applications, such as battery supplies. They are
similar to the OP290 and OP295 , but use a smaller chip that increases output efficiency at low current levels by
increasing current density. Light output can be maximized with continuous (D.C.) forward current up to 100 mA or
with pulsed forward current up to 750 mA. The Cathode Lead length is 0.06” (1.52 mm) shorter than the Anode
Lead.
Each OP295, OP296 and OP297 series come in three electrical parameters options A, B and C. The OP295
series forward current is specified under pulse conditions up to 5 amps, the OP296 series forward current is
specified under pulse conditions up to 2 amps and the OP297 series forward current is specified under pulse
conditions up to 1 amp. The Cathode Lead length is 0.06” (1.52 mm) shorter than the Anode Lead. The
OP297FAB has a reversed polarity from the OP297A, B or C . The silver-copper lead frame offers excellent
thermal characteristics.
All of these devices are spectrally and mechanically matched to the OP593 and OP598 series phototransistors.
Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data.
Applications:
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Non-contact reflective
object sensor
Assembly line
automation
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Machine automation
Machine safety
End of travel sensor
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Door sensor
Battery-operated
applications
RoHS
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue C
03/2012
Page 1 of 8
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相关代理商/技术参数
OP293B 制造商:TT Electronics / OPTEK Technology 功能描述:INFRARED LIGHT EMITTING DIODE 890 NM wA
OP293C 功能描述:红外发射源 Infrared 890nm RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk
OP293EP 制造商:AD 制造商全称:Analog Devices 功能描述:Precision, Micropower Operational Amplifiers
OP293ES 功能描述:IC OPAMP GP 35KHZ DUAL 8SOIC RoHS:否 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:2,500 系列:Excalibur™ 放大器类型:J-FET 电路数:1 输出类型:- 转换速率:45 V/µs 增益带宽积:10MHz -3db带宽:- 电流 - 输入偏压:20pA 电压 - 输入偏移:490µV 电流 - 电源:1.7mA 电流 - 输出 / 通道:48mA 电压 - 电源，单路/双路(±):4.5 V ~ 38 V，±2.25 V ~ 19 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR)
OP293ES-REEL 功能描述:IC OPAMP GP 35KHZ DUAL 8SOIC RoHS:否 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:2,500 系列:Excalibur™ 放大器类型:J-FET 电路数:1 输出类型:- 转换速率:45 V/µs 增益带宽积:10MHz -3db带宽:- 电流 - 输入偏压:20pA 电压 - 输入偏移:490µV 电流 - 电源:1.7mA 电流 - 输出 / 通道:48mA 电压 - 电源，单路/双路(±):4.5 V ~ 38 V，±2.25 V ~ 19 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR)
OP293ES-REEL7 制造商:Analog Devices 功能描述:OP Amp Dual GP 制造商:Analog Devices 功能描述:OP Amp Dual GP ±18V/36V 8-Pin SOIC N T/R
OP293ESZ 功能描述:IC OPAMP GP 35KHZ DUAL 8SOIC RoHS:是 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:2,500 系列:- 放大器类型:通用 电路数:4 输出类型:- 转换速率:0.6 V/µs 增益带宽积:1MHz -3db带宽:- 电流 - 输入偏压:45nA 电压 - 输入偏移:2000µV 电流 - 电源:1.4mA 电流 - 输出 / 通道:40mA 电压 - 电源，单路/双路(±):3 V ~ 32 V，±1.5 V ~ 16 V 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:14-TSSOP（0.173"，4.40mm 宽） 供应商设备封装:14-TSSOP 包装:带卷 (TR) 其它名称:LM324ADTBR2G-NDLM324ADTBR2GOSTR
OP293ESZ 制造商:Analog Devices 功能描述:IC, OP-AMP, 35KHZ, 0.015V/ us, SOIC-8